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Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure
- Han, Jung Hoon;
- Shin, Dong Yeob;
- Sung, Chihun;
- Cho, Sung Haeng;
- Ju, Byeong-Kwon;
- ... Chung, Kwun-Bum;
- 외 1명
Citations
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0초록
The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer. © 2024, John Wiley and Sons Inc. All rights reserved.
키워드
Al:IZTO; electron trapping; heterojunction; metal-oxide thin film transistors; tellurium; Threshold voltage
- 제목
- Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure
- 저자
- Han, Jung Hoon; Shin, Dong Yeob; Sung, Chihun; Cho, Sung Haeng; Ju, Byeong-Kwon; Chung, Kwun-Bum; Nam, Sooji
- 발행일
- 2024-06
- 유형
- Conference paper
- 권
- 55
- 호
- 1
- 페이지
- 1452 ~ 1454
- 언어
- ENG
- 출판사
- John Wiley and Sons Inc
- 발행국가
- 미국
- 분량
- 3 페이지
- ISSN
- E 2168-0159
P 0097-966X