Solid-State Light-Emitting Devices Using Novel Green Luminescent Material of Semiconductive Nanoporous ZnMnO

초록

The novel green luminescent material of the semiconductive nanoporous ZnMnO thin film was fabricated by grain boundary engineering and thermal stress engineering via the thermal nucleation of the sputter-grown ZnMnO layers. Nanoporous ZnMnO exhibited the strong green luminescence characteristics, attributing to the photon confinement at the localized green-emission band formed near the edge area of ZnMnO nanopores. Using semiconductive nanoporous ZnMnO, two different types of high-performance solid-state lighting devices (i.e., field emission device and light-emitting diode) were demonstrated as tangible applications of semiconductive nanoporous ZnMnO.

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