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Fmax=433GHz from 0.1um Gamma Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs

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Fmax=433GHz from 0.1um Gamma Gate InGaAs/InAlAs/GaAs Metamorphic HEMTs
저자
이진구
발행일
2003-10-06
학회명
European Gallium Arsenide & other Compound Semiconductors Application Symposium
개최지
Munich
학회 개최일
2003-10-06 ~ 2003-10-08

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