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Physical properties evaluation of nebulized spray pyrolysis prepared Nd doped ZnO thin films for opto-electronic applications

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dc.contributor.authorDevi, A. Rohini-
dc.contributor.authorChristy, A. Jegatha-
dc.contributor.authorKumar, K. Deva Arun-
dc.contributor.authorValanarasu, S.-
dc.contributor.authorHamdy, Mohamed S.-
dc.contributor.authorAl-Namshah, K. S.-
dc.contributor.authorAlhanash, Abdullah M.-
dc.contributor.authorVikraman, Dhanasekaran-
dc.contributor.authorKim, Hyun-Seok-
dc.date.accessioned2023-04-28T04:41:50Z-
dc.date.available2023-04-28T04:41:50Z-
dc.date.issued2019-04-
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/8263-
dc.description.abstractThin films of neodymium (Nd) doped zinc oxide (NZO) were coated onto glass substrates at 400 degrees C by nebulized spray pyrolysis using different doping weight percentage (wt%) of Nd. The prepared films were exhibited in hexagonal structure of polycrystalline nature along with (002) preferential orientation. Morphological properties and elemental compositions were performed by scanning electron microscopy and energy dispersive by X-ray, respectively. Tauc's plot discovered the optical energy band gap of 3.17eV for 5wt% Nd doped NZO film. PL profiles depicted a solid green emission peak at around 680nm at room temperature. Optical constants such as refractive indices, dielectric constants, carrier concentration and plasma frequency were evaluated for NZO through optical approximation route. Hall mobility and carrier concentrations were enhanced with rise of Nd doping wt%. A drastic change in the resistivity was observed due to incorporation of Nd dopant and it has evidently demonstrated in detail.-
dc.format.extent11-
dc.language영어-
dc.language.isoENG-
dc.publisherSPRINGER-
dc.titlePhysical properties evaluation of nebulized spray pyrolysis prepared Nd doped ZnO thin films for opto-electronic applications-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1007/s10854-019-01039-z-
dc.identifier.scopusid2-s2.0-85062664320-
dc.identifier.wosid000467637200007-
dc.identifier.bibliographicCitationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.30, no.8, pp 7257 - 7267-
dc.citation.titleJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS-
dc.citation.volume30-
dc.citation.number8-
dc.citation.startPage7257-
dc.citation.endPage7267-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlus1ST-PRINCIPLES PREDICTION-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusCR-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusCONSTANTS-
dc.subject.keywordPlusTHICKNESS-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusCO-
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