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The effect of rare earth Nd3+ doping on physical characteristics of Cu2O thin films derived by electrodeposition technique

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dc.contributor.authorRavichandiran, C.-
dc.contributor.authorSakthivelu, A.-
dc.contributor.authorDavidprabu, R.-
dc.contributor.authorKumar, K. Deva Arun-
dc.contributor.authorValanarasu, S.-
dc.contributor.authorKathalingam, A.-
dc.contributor.authorGanesh, V-
dc.contributor.authorShkir, Mohd-
dc.contributor.authorAlFaify, S.-
dc.date.accessioned2023-04-28T03:40:32Z-
dc.date.available2023-04-28T03:40:32Z-
dc.date.issued2019-08-01-
dc.identifier.issn0040-6090-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/7782-
dc.description.abstractUndoped and rare earth Neodymium (Nd) doped cuprous oxide (Cu2O) thin films were prepared by electro-deposition method. The prepared film's structural, morphological, optical and photosensitive properties were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, ultra violet-visible and I-V measurements. The fabricated Cu2O:Nd films exhibited polycrystalline nature with cubic crystal system, and favorably grown along (111) orientation. Crystallite size was decreased from 56 nm to 30 nm with Nd concentrations. Raman spectrum confirmed the Cu2O phase of the prepared films. The morphological analysis showed pyramidal shaped particles for the undoped Cu2O thin film. The energy gap was reduced from 2.04 eV to 1.89 eV as Nd doping level was increased. From photoluminescence spectrum a high intense peak was observed at 619 nm which confirms the optical quality of Cu2O phase. The dielectric constant was increased by increasing the Nd doping concentration from 0 to 5%. In photosensitivity analysis an increase of photo response with respect to illuminated current was observed.-
dc.format.extent8-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER SCIENCE SA-
dc.titleThe effect of rare earth Nd3+ doping on physical characteristics of Cu2O thin films derived by electrodeposition technique-
dc.typeArticle-
dc.publisher.location스위스-
dc.identifier.doi10.1016/j.tsf.2019.05.008-
dc.identifier.scopusid2-s2.0-85065894909-
dc.identifier.wosid000469854700011-
dc.identifier.bibliographicCitationTHIN SOLID FILMS, v.683, pp 82 - 89-
dc.citation.titleTHIN SOLID FILMS-
dc.citation.volume683-
dc.citation.startPage82-
dc.citation.endPage89-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryMaterials Science, Coatings & Films-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusCUPROUS-OXIDE-
dc.subject.keywordPlusELECTRICAL-PROPERTIES-
dc.subject.keywordPlusOPTICAL-PROPERTIES-
dc.subject.keywordPlusELECTROCHEMICAL DEPOSITION-
dc.subject.keywordPlusPHOTOVOLTAIC PROPERTIES-
dc.subject.keywordPlusRAMAN-SCATTERING-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordAuthorElectrodeposition-
dc.subject.keywordAuthorStructural-
dc.subject.keywordAuthorOptical properties-
dc.subject.keywordAuthorElectrical photo response properties-
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