Effect of novel Nd3+ doping on physical properties of nebulizer spray pyrolysis fabricated ZnS thin films for optoelectronic technology
- Authors
- Jebathew, A. Jesu; Karunakaran, M.; Kumar, K. Deva Arun; Valanarasuk, S.; Ganesh, V; Shkir, Mohd; AlFaify, S.; Kathalingam, A.
- Issue Date
- 1-Nov-2019
- Publisher
- ELSEVIER
- Keywords
- Rare earth; Nd: ZnS thin film; Nebulizer spray pyrolysis; Four probe method; Photoluminescence
- Citation
- PHYSICA B-CONDENSED MATTER, v.572, pp 109 - 116
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- PHYSICA B-CONDENSED MATTER
- Volume
- 572
- Start Page
- 109
- End Page
- 116
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/7414
- DOI
- 10.1016/j.physb.2019.07.042
- ISSN
- 0921-4526
1873-2135
- Abstract
- Neodymium doped zinc sulphide (Nd: ZnS) thin films were coated on glass substrates at 450 degrees C through low cost nebulizer spray pyrolysis (NSP) method. Structure, morphology, opto-electrical characteristics of Nd doped ZnS films with various Nd doping concentrations (0%, 1, %, 3% and 5%) were studied. X-ray diffraction patterns revealed that all coated films were polycrystalline hexagonal structure with (102) as a preferential direction. SEM images showed smooth and uniform spherical grains without any cracks and pinholes. Topological view by AFM described the increasing of roughness of the film through doping concentration. EDAX and Elemental mapping images confirmed the presence of Zn, S and Nd without any other impurities. Raman spectra reveals that E-1(LO), 2TO, 2LO and 3LO emission modes with corresponding to the wave number. PL spectra showed high intense visible and broad UV emission band at 463 nm and 397 nm, respectively. Thickness of the films increased with Nd doping concentration reflecting the reduction of transparency of the films from 86% to 78% for 0% and 5% of Nd. UV-Vis Spectrum was used to study the energy gap (Eg), dielectric constant(epsilon), refractive index(n), and extinction coefficient (k) of the prepared films. Four-point probe method was used to calculate the activation energy of Nd: ZnS thin films from the graph drawn between ln (rho) and (1/T).
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Collections - College of Engineering > ETC > 1. Journal Articles

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