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Investigation of erbium co-doping on fluorine doped tin oxide via nebulizer spray pyrolysis for optoelectronic applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Thomas, R. | - |
| dc.contributor.author | Mathavan, T. | - |
| dc.contributor.author | Ganesh, V | - |
| dc.contributor.author | Yahia, I. S. | - |
| dc.contributor.author | Zahran, H. Y. | - |
| dc.contributor.author | AlFiafy, S. | - |
| dc.contributor.author | Kathalingam, A. | - |
| dc.date.accessioned | 2023-04-27T23:40:35Z | - |
| dc.date.available | 2023-04-27T23:40:35Z | - |
| dc.date.issued | 2020-05-02 | - |
| dc.identifier.issn | 0306-8919 | - |
| dc.identifier.issn | 1572-817X | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/6619 | - |
| dc.description.abstract | Novel nebulizer spray pyrolysis method was used to prepare erbium (Er) and fluorine co-doped tin oxide (FTO) films with doping concentration (0.5, 1, 1.5 wt.%). The effect of Er on FTO were analyzed by various characterization tools. XRD studies revealed tetragonal crystal structure with polycrystalline nature and crystallize size decreasing with Er concentration. AFM studies confirmed the smoothness of the films. Photoluminescence study revealed the emission peaks in UV and visible region. Transmittance, carrier concentration and carrier mobility are more in case of 1.5 wt.% doping concentration confirms the prepared films are opting for optoelectronic devices. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | SPRINGER | - |
| dc.title | Investigation of erbium co-doping on fluorine doped tin oxide via nebulizer spray pyrolysis for optoelectronic applications | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1007/s11082-020-02376-8 | - |
| dc.identifier.scopusid | 2-s2.0-85084116270 | - |
| dc.identifier.wosid | 000531865400001 | - |
| dc.identifier.bibliographicCitation | OPTICAL AND QUANTUM ELECTRONICS, v.52, no.5 | - |
| dc.citation.title | OPTICAL AND QUANTUM ELECTRONICS | - |
| dc.citation.volume | 52 | - |
| dc.citation.number | 5 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalResearchArea | Optics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Quantum Science & Technology | - |
| dc.relation.journalWebOfScienceCategory | Optics | - |
| dc.subject.keywordPlus | OPTICAL-ABSORPTION | - |
| dc.subject.keywordPlus | QUANTUM DOTS | - |
| dc.subject.keywordPlus | THIN-FILMS | - |
| dc.subject.keywordAuthor | Polycrystalline | - |
| dc.subject.keywordAuthor | Refractive index | - |
| dc.subject.keywordAuthor | Photoluminescence | - |
| dc.subject.keywordAuthor | Dielectric constants | - |
| dc.subject.keywordAuthor | Optoelectronic device | - |
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