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Crystalline In2O3 Deposited by PEALD for 3D Ferroelectric Field Effect Transistors Applications

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dc.contributor.author김현석-
dc.date.accessioned2026-01-17T00:01:05Z-
dc.date.available2026-01-17T00:01:05Z-
dc.date.issued2025-06-17-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/62946-
dc.titleCrystalline In2O3 Deposited by PEALD for 3D Ferroelectric Field Effect Transistors Applications-
dc.typeConference-
dc.citation.startPage0-
dc.citation.endPage0-
dc.citation.conferenceNameGCIM 2025-
dc.citation.conferencePlace대한민국-
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