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패시베이션 및 고유전율 절연체 도입을 통한 IGZO 박막 트랜지스터의 전기적 특성 및 안정성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김현석 | - |
| dc.date.accessioned | 2026-01-17T00:00:56Z | - |
| dc.date.available | 2026-01-17T00:00:56Z | - |
| dc.date.issued | 2025-11-13 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/62925 | - |
| dc.title | 패시베이션 및 고유전율 절연체 도입을 통한 IGZO 박막 트랜지스터의 전기적 특성 및 안정성 | - |
| dc.type | Conference | - |
| dc.citation.startPage | 465 | - |
| dc.citation.endPage | 465 | - |
| dc.citation.conferenceName | 2025 한국재료학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Kim, Hyun Suk
- College of Engineering (Department of Energy and Materials Engineering)