Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
저항 변화 메모리 장치용 가변 저항 산화막의 제조방법
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.contributor.author | 김용민 | - |
| dc.contributor.author | 김현정 | - |
| dc.contributor.author | 김형상 | - |
| dc.contributor.author | 서홍우 | - |
| dc.contributor.author | 정규호 | - |
| dc.date.accessioned | 2025-12-22T01:14:12Z | - |
| dc.date.available | 2025-12-22T01:14:12Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/62550 | - |
| dc.title | 저항 변화 메모리 장치용 가변 저항 산화막의 제조방법 | - |
| dc.title.alternative | Method of Fabricating Variable-Resistance Oxide Film for Resistive Memory Device | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2006-02-28 | - |
| dc.date.registration | 2010-05-17 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-0959755 | - |
| dc.identifier.patentApplicationNumber | 10-2006-0019338 | - |
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.