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저온 큐어링을 이용한 게이트 절연막 형성방법 및 이를 이용한 유기박막트랜지스터 제조방법 (Method of gate dielectric formation using low temperature curing and Method for manufacturing organic thin film transistor using the same)

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dc.contributor.author김삼동-
dc.contributor.author이재서-
dc.contributor.author문성운-
dc.contributor.author오정훈-
dc.date.accessioned2025-12-22T01:14:02Z-
dc.date.available2025-12-22T01:14:02Z-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/62540-
dc.title저온 큐어링을 이용한 게이트 절연막 형성방법 및 이를 이용한 유기박막트랜지스터 제조방법 (Method of gate dielectric formation using low temperature curing and Method for manufacturing organic thin film transistor using the same)-
dc.title.alternativeMethod of gate dielectric formation using low temperature curing and Method for manufacturing organic thin film transistor using the same-
dc.typePatent-
dc.publisher.location대한민국-
dc.contributor.assignee동국대학교산학협력단-
dc.date.application2009-08-18-
dc.date.registration2010-02-12-
dc.type.iprs특허-
dc.identifier.patentRegistrationNumber10-0943449-
dc.identifier.patentApplicationNumber10-2009-0076373-
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College of Engineering > Department of Electronics and Electrical Engineering > 4. Patents

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