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초고주파 반도체 소자

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dc.contributor.author이진구-
dc.contributor.author김삼동-
dc.contributor.author이복형-
dc.contributor.author이성대-
dc.date.accessioned2025-12-22T01:13:28Z-
dc.date.available2025-12-22T01:13:28Z-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/62511-
dc.title초고주파 반도체 소자-
dc.title.alternativeULTRA-HIGH FREQUENCY SEMICONDUCTOR ELEMENT-
dc.typePatent-
dc.publisher.location일본-
dc.contributor.assignee동국대학교산학협력단-
dc.date.application2005-09-14-
dc.date.registration2012-10-12-
dc.type.iprs특허-
dc.identifier.patentRegistrationNumber5106767-
dc.identifier.patentApplicationNumberJP2005-267652-
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College of Engineering > Department of Electronics and Electrical Engineering > 4. Patents

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