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Recent progress in the development of backplane thin-film transistors for information displays
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jang, Seong Cheol | - |
| dc.contributor.author | Shim, Junoh | - |
| dc.contributor.author | Jang, Hyowon | - |
| dc.contributor.author | Lee, Yongju | - |
| dc.contributor.author | Biswas, Swarup | - |
| dc.contributor.author | Park, Jaewon | - |
| dc.contributor.author | Shin, Hoseong | - |
| dc.contributor.author | Kim, Hyeok | - |
| dc.contributor.author | Kim, Sunkook | - |
| dc.contributor.author | Kim, Hyun-Suk | - |
| dc.date.accessioned | 2025-11-10T07:30:11Z | - |
| dc.date.available | 2025-11-10T07:30:11Z | - |
| dc.date.issued | 2025-10 | - |
| dc.identifier.issn | 1598-0316 | - |
| dc.identifier.issn | 2158-1606 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/62073 | - |
| dc.description.abstract | This paper comprehensively reviews recent advances in thin-film transistor (TFT) technologies based on three major semiconductor platforms: amorphous metal oxides, two-dimensional transition metal dichalcogenides, and organic semiconductors. As modern display technologies demand higher resolution, faster switching speeds, and greater flexibility, the performance requirements for TFTs have expanded to include high carrier mobility, low power consumption, environmental stability, and compatibility with low-temperature, scalable fabrication processes. This review highlights emerging research trends in material innovation and device engineering that are propelling the development of high-performance TFTs for next-generation display applications. © 2025 Elsevier B.V., All rights reserved. | - |
| dc.format.extent | 16 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | 한국정보디스플레이학회 | - |
| dc.title | Recent progress in the development of backplane thin-film transistors for information displays | - |
| dc.type | Article | - |
| dc.publisher.location | 대한민국 | - |
| dc.identifier.doi | 10.1080/15980316.2025.2548808 | - |
| dc.identifier.scopusid | 2-s2.0-105020594214 | - |
| dc.identifier.wosid | 001610357300001 | - |
| dc.identifier.bibliographicCitation | Journal of Information Display, v.26, no.4, pp 341 - 356 | - |
| dc.citation.title | Journal of Information Display | - |
| dc.citation.volume | 26 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 341 | - |
| dc.citation.endPage | 356 | - |
| dc.type.docType | Review | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordPlus | AMORPHOUS-OXIDE TFT | - |
| dc.subject.keywordPlus | HIGH-MOBILITY | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
| dc.subject.keywordAuthor | display | - |
| dc.subject.keywordAuthor | organic semiconductor | - |
| dc.subject.keywordAuthor | Oxide semiconductor | - |
| dc.subject.keywordAuthor | thin-film transistor | - |
| dc.subject.keywordAuthor | two-dimensional semiconductor | - |
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