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저 전위밀도를 가지는 질화갈륨(ＧａＮ)막 및 그 형성방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2025-11-05T01:47:07Z | - |
| dc.date.available | 2025-11-05T01:47:07Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/62039 | - |
| dc.title | 저 전위밀도를 가지는 질화갈륨(ＧａＮ)막 및 그 형성방법 | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단;(주)실트론;학교법인 동국대학교 | - |
| dc.date.application | 2004-08-31 | - |
| dc.date.registration | 2006-09-14 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-0626868-00-00 | - |
| dc.identifier.patentApplicationNumber | 10-2004-0069210 | - |
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