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화합물 반도체 소자의 게이트 전극 제조방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이진구 | - |
| dc.date.accessioned | 2025-11-05T01:46:31Z | - |
| dc.date.available | 2025-11-05T01:46:31Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/61984 | - |
| dc.title | 화합물 반도체 소자의 게이트 전극 제조방법 | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2000-02-19 | - |
| dc.date.registration | 2002-03-20 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-0331018-00-00 | - |
| dc.identifier.patentApplicationNumber | 10-2000-0008022 | - |
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