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Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same 인듐갈륨나이트라이드양자웰을가지는나노막대어레이구조의고휘도발광다이오드및그제조방법 국내출원번호 2004 0030014 2004/04/29
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2025-11-05T01:46:19Z | - |
| dc.date.available | 2025-11-05T01:46:19Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/61960 | - |
| dc.title | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same 인듐갈륨나이트라이드양자웰을가지는나노막대어레이구조의고휘도발광다이오드및그제조방법 국내출원번호 2004 0030014 2004/04/29 | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2004-02-13 | - |
| dc.date.registration | 2008-07-25 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | JP4160000 | - |
| dc.identifier.patentApplicationNumber | JP2004-36604 | - |
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