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강유전 반도체의 전류-전압 히스테리시스를 이용한 메모리디바이스
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2025-11-05T01:46:11Z | - |
| dc.date.available | 2025-11-05T01:46:11Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/61947 | - |
| dc.title | 강유전 반도체의 전류-전압 히스테리시스를 이용한 메모리디바이스 | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2003-10-21 | - |
| dc.date.registration | 2006-12-29 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-0665528-00-00 | - |
| dc.identifier.patentApplicationNumber | 10-2003-0073555 | - |
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