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금속 전구체 반응성 제어를 통한 InGaP III-V족 원소 양자점의 조성제어 합성 방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최민재 | - |
| dc.contributor.author | 유도헌 | - |
| dc.date.accessioned | 2025-09-09T10:03:49Z | - |
| dc.date.available | 2025-09-09T10:03:49Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/61484 | - |
| dc.title | 금속 전구체 반응성 제어를 통한 InGaP III-V족 원소 양자점의 조성제어 합성 방법 | - |
| dc.title.alternative | Reactivity tuning of metal precursor for the composition control of the ternary alloyed InGaP quantum dots | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2023-08-24 | - |
| dc.date.registration | 2025-07-03 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-2831424 | - |
| dc.identifier.patentApplicationNumber | 10-2023-0111369 | - |
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