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Cited 5 time in webofscience Cited 7 time in scopus
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Lateral Epitaxial Heterostructures of Halide Perovskites for Diode Application

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dc.contributor.authorMandal, Tarak Nath-
dc.contributor.authorJana, Atanu-
dc.date.accessioned2023-04-27T21:40:48Z-
dc.date.available2023-04-27T21:40:48Z-
dc.date.issued2020-09-02-
dc.identifier.issn2590-2393-
dc.identifier.issn2590-2385-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/6124-
dc.description.abstractSolution-processed lateral epitaxial growth of two-dimensional (2D) halide perovskite heterostructures, multiheterostructures, and superlattices is a daunting task because of their soft fragile ionic bonding and high intrinsic ion mobility of halide ions. Recently, these structures have been successfully developed for Pb2+- and Sn2+-based 2D halide perovskites using various large organic molecules, and its potential energy application has been shown in thin-film electrical diodes.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherELSEVIER-
dc.titleLateral Epitaxial Heterostructures of Halide Perovskites for Diode Application-
dc.typeArticle-
dc.publisher.location네델란드-
dc.identifier.doi10.1016/j.matt.2020.06.027-
dc.identifier.scopusid2-s2.0-85089898163-
dc.identifier.wosid000568563900013-
dc.identifier.bibliographicCitationMATTER, v.3, no.3, pp 617 - 619-
dc.citation.titleMATTER-
dc.citation.volume3-
dc.citation.number3-
dc.citation.startPage617-
dc.citation.endPage619-
dc.type.docTypeEditorial Material-
dc.description.isOpenAccessY-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.description.journalRegisteredClassesci-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusLIGHT-
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