1D-CoSe2 nanoarray: a designed structure for efficient hydrogen evolution and symmetric supercapacitor characteristics
- Authors
- Rabani, Iqra; Hussain, Sajjad; Vikraman, Dhanasekaran; Seo, Young-Soo; Jung, Jongwan; Jana, Atanu; Shrestha, Nabeen K.; Jalalah, Mohammed; Noh, Yong-Young; Patil, Supriya A.
- Issue Date
- 28-Oct-2020
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- DALTON TRANSACTIONS, v.49, no.40, pp 14191 - 14200
- Pages
- 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- DALTON TRANSACTIONS
- Volume
- 49
- Number
- 40
- Start Page
- 14191
- End Page
- 14200
- URI
- https://scholarworks.dongguk.edu/handle/sw.dongguk/6002
- DOI
- 10.1039/d0dt02548h
- ISSN
- 1477-9226
1477-9234
- Abstract
- Direct growth of self-supported one-dimensional (1D) nanorod arrays on conducting substrates is highly attractive for electrocatalysis, due to their unique shape, size, and length. In this work, a facile and simple two-step method was employed to synthesize 1D-CoSe2 nanoarrays on titanium (Ti) foil via a wet chemical ion-exchange approach. The as-synthesized 1D-CoSe2 nanoarrays were directly used as electrode materials for hydrogen evolution reaction and supercapacitors. As an electrocatalyst, the optimized 1D-CoSe2(t(ex)-48 h) nanoarray exhibits excellent hydrogen evolution properties with a small Tafel slope of 78 mV dec(-1), low overpotentials of 41 mV@1 mA cm(-2) and 216 mV@10 mA cm(-2), and extended robust performance for 25 h. Moreover, for a symmetric device, it delivers a maximum specific capacitance of 152 F g(-1) at 0.5 A g(-1) and a better energy density of 21.1 W h kg(-1) at a power density of 0.5 kW kg-1. Also, the symmetric device capacity retention behavior achieves similar to 96.8% of the initial result after 5000 cycles, revealing the good stability of the electrode. Our findings offer a new way to further the development of high-performance energy devices.
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- Appears in
Collections - College of Engineering > Department of Electronics and Electrical Engineering > 1. Journal Articles
- College of Advanced Convergence Engineering > Division of System Semiconductor > 1. Journal Articles

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