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산화아연 나노구조를 이용한 갈륨질화물 능동소자 기반 자외선 센서

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dc.contributor.author김삼동-
dc.contributor.author김현석-
dc.date.accessioned2025-09-09T07:35:22Z-
dc.date.available2025-09-09T07:35:22Z-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/60023-
dc.description.abstract본 발명은 차세대 자외선 기반 광학적 생체진단을 위한 의료기기 핵심 소자로서 산화아연 (ZnO) 나노로드를 이용한 반도체 능동소자를 이용하여 초고감도 자외선 (ultraviolet, UV) 센서의 소자 및 공정기술을 제시한다.-
dc.title산화아연 나노구조를 이용한 갈륨질화물 능동소자 기반 자외선 센서-
dc.title.alternativeGallium nitride-based active ultraviolet photodetector using zinc-oxide nanostructure-
dc.typePatent-
dc.publisher.location대한민국-
dc.contributor.assignee동국대학교산학협력단-
dc.date.application2016-11-09-
dc.date.registration2018-10-23-
dc.type.iprs특허-
dc.identifier.patentRegistrationNumber10-1912912-
dc.identifier.patentApplicationNumber10-2016-0149043-
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