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Spin_On_Dielectric 물질을 이용한 Metal_Oxide_Semiconductor_Structure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김삼동 | - |
| dc.contributor.author | 고필석 | - |
| dc.contributor.author | 정성호 | - |
| dc.date.accessioned | 2025-09-09T07:35:21Z | - |
| dc.date.available | 2025-09-09T07:35:21Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/60019 | - |
| dc.description.abstract | 본 발명은 전력 반도체 소자에서 Spin-On-Dielectric 물질을 이용한 MOS 구조를 제작함으로써 기존 공정에서 사용되던 PVD, CVD의 다른방법을 제시한다. | - |
| dc.title | Spin_On_Dielectric 물질을 이용한 Metal_Oxide_Semiconductor_Structure | - |
| dc.title.alternative | MOS structure using Spin_On_Dielectric | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2012-08-20 | - |
| dc.date.registration | 2013-10-01 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-1316112 | - |
| dc.identifier.patentApplicationNumber | 10-2012-0090969 | - |
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