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탄성물질이 포함된 반도체 활성층, 게이트 절연막 및 이들을 포함한 박막트랜지스터
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 노용영 | - |
| dc.date.accessioned | 2025-09-09T07:02:43Z | - |
| dc.date.available | 2025-09-09T07:02:43Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/59526 | - |
| dc.title | 탄성물질이 포함된 반도체 활성층, 게이트 절연막 및 이들을 포함한 박막트랜지스터 | - |
| dc.title.alternative | Organic thin film transistors with stretchable semiconductors and gate dielectrics | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2014-04-03 | - |
| dc.date.registration | 2015-05-04 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-1519100 | - |
| dc.identifier.patentApplicationNumber | 10-2014-0039960 | - |
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