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[우선권주장]그라핀 옥사이드를 이용한 전계효과 트랜지스터 및 그 제조방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이상욱 | - |
| dc.contributor.author | 강태원 | - |
| dc.contributor.author | 파닌 | - |
| dc.date.accessioned | 2025-09-09T06:35:48Z | - |
| dc.date.available | 2025-09-09T06:35:48Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/59460 | - |
| dc.title | [우선권주장]그라핀 옥사이드를 이용한 전계효과 트랜지스터 및 그 제조방법 | - |
| dc.title.alternative | Field Effect Transistor using graphene oxide thin film and the method thereof | - |
| dc.type | Patent | - |
| dc.publisher.location | 대한민국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2012-07-20 | - |
| dc.date.registration | 2014-08-01 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | 10-1428015 | - |
| dc.identifier.patentApplicationNumber | 10-2012-0079152 | - |
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