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트렌치 기법을 이용한 2단자 반도체 소자 제작 방법
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이진구 | - |
| dc.contributor.author | 김미라 | - |
| dc.contributor.author | 민대홍 | - |
| dc.contributor.author | 이성대 | - |
| dc.date.accessioned | 2025-09-09T06:32:14Z | - |
| dc.date.available | 2025-09-09T06:32:14Z | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/59265 | - |
| dc.description.abstract | - | - |
| dc.title | 트렌치 기법을 이용한 2단자 반도체 소자 제작 방법 | - |
| dc.title.alternative | FABRICATION METHOD OF TWO-TERMINAL SEMICONDUCTOR COMPONENT USING TRENCH TECHNOLOGY | - |
| dc.type | Patent | - |
| dc.publisher.location | 미국 | - |
| dc.contributor.assignee | 동국대학교산학협력단 | - |
| dc.date.application | 2009-10-22 | - |
| dc.date.registration | 2011-11-01 | - |
| dc.type.iprs | 특허 | - |
| dc.identifier.patentRegistrationNumber | US8048800 | - |
| dc.identifier.patentApplicationNumber | US12/603,766 | - |
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