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[연차포기]GaN 후막의 제조방법 (Method for manufacturing thick film of GaN)

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dc.contributor.author강태원-
dc.contributor.author권영해-
dc.contributor.author류성룡-
dc.date.accessioned2025-09-09T06:31:11Z-
dc.date.available2025-09-09T06:31:11Z-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/59220-
dc.title[연차포기]GaN 후막의 제조방법 (Method for manufacturing thick film of GaN)-
dc.title.alternativeMethod for manufacturing thick film of GaN-
dc.typePatent-
dc.publisher.location대한민국-
dc.contributor.assignee동국대학교산학협력단-
dc.date.application2007-03-26-
dc.date.registration2008-06-11-
dc.type.iprs특허-
dc.identifier.patentRegistrationNumber10-0839224-0000-
dc.identifier.patentApplicationNumber10-2007-0029481-
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