Metal halide perovskites as gate dielectrics for transistor applications: progress and perspectives

Abstract

Metal halide perovskites (MHPs) have been widely used as active (semiconducting) layers in electronic and optoelectronic devices for over two decades, owing to their tunable structural and electronic properties, which allow for meeting the requirements of diverse applications. However, the versatility of MHPs as gate dielectrics has been underexplored despite their substantially high dielectric constant, which is promising for low-power and soft electronics. In this perspective, we focus on understanding the dielectric polarizability of MHPs and their potential for use as gate dielectrics in thin-film transistor applications. We discuss recent studies on MHPs as gate dielectrics to provide new insights and highlight potential research opportunities for enhancing the performance of thin-film transistor devices by exploiting MHPs as gate dielectrics.