P-Type Tellurium-Based Synaptic Transistor Manufactured by Sputtering at Room Temperature on a High-k (Al2O3) Gate Insulator

김현석

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P-Type Tellurium-Based Synaptic Transistor Manufactured by Sputtering at Room Temperature on a High-k (Al2O3) Gate Insulator

Authors: 김현석

Issue Date: 3-Nov-2023

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/55729

Place: 대한민국

Conference Name: ICAE 2023

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Appears in Collections: College of Engineering > Department of Energy and Materials Engineering > 2. Conference Papers

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Kim, Hyun Suk: College of Engineering (Department of Energy and Materials Engineering)

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