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Fabrication and Characterization of Synaptic Devices Based on Au/HfxZr1-xO2/Pt Ferroelectric Tunnel Junction
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이세준 | - |
| dc.date.accessioned | 2024-10-31T01:20:22Z | - |
| dc.date.available | 2024-10-31T01:20:22Z | - |
| dc.date.issued | 2023-01-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/55517 | - |
| dc.title | Fabrication and Characterization of Synaptic Devices Based on Au/HfxZr1-xO2/Pt Ferroelectric Tunnel Junction | - |
| dc.type | Conference | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.citation.conferenceName | 7th International Conference on Advances in Functional Materials | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Kyushu University | - |
| dc.citation.conferenceDate | 2023-01-09 ~ 2023-01-12 | - |
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Related Researcher
- Lee, Se Joon
- College of Advanced Convergence Engineering (Division of System Semiconductor)