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Effects of Thermal Annealing on Electrostatic Capacitance Properties for High-k ZrO2 Layers Grown on Ge
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이세준 | - |
| dc.date.accessioned | 2024-10-30T19:04:05Z | - |
| dc.date.available | 2024-10-30T19:04:05Z | - |
| dc.date.issued | 2017-08-15 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/53466 | - |
| dc.title | Effects of Thermal Annealing on Electrostatic Capacitance Properties for High-k ZrO2 Layers Grown on Ge | - |
| dc.type | Conference | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.citation.conferenceName | 2017 Advances in Functional Materials Conference | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | UCLA | - |
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