Physical and electrical properties' evaluation of SnS:Cu thin films

Abstract

This paper reports successful fabrication of copper-doped tin sulphide (SnS:Cu) thin films using nebulized spray pyrolysis. Different Cu doping concentrations (2, 4, 6, and 8 wt-%) were employed to coat SnS:Cu thin films. The fabricated SnS:Cu thin films were structurally confirmed by X-ray diffraction and Raman scattering analyses. Energy-dispersive X-ray result has proved Cu atom doping within the SnS matrix. Atomic force microscopy has identified topographical modifications on SnS:Cu thin films due to Cu doping concentration. UV-visible-NIR spectroscopy was used to derive the optical band gap in the range of 1.38-1.59 eV depending on Cu doping percentage. Hall Effect measurements were employed to analyze the electrical conductivity of SnS:Cu thin films. A p-n junction FTO/n-CdS/p-SnS:Cu/Al prototype device was constructed with photo response behaviour under dark and illumination circumstances.