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Observation of Negative-Differential Resistance Behaviors in Gated p+-i-n+ Silicon Transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이세준 | - |
| dc.date.accessioned | 2024-10-30T18:24:06Z | - |
| dc.date.available | 2024-10-30T18:24:06Z | - |
| dc.date.issued | 2016-07-04 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/52957 | - |
| dc.title | Observation of Negative-Differential Resistance Behaviors in Gated p+-i-n+ Silicon Transistors | - |
| dc.type | Conference | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.citation.conferenceName | The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016) | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 라마다프린스호텔 | - |
| dc.citation.conferenceDate | 2016-07-03 ~ 2016-07-07 | - |
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