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Rapid solution process for high performance and stable Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 슈용 | - |
| dc.date.accessioned | 2024-10-30T16:23:58Z | - |
| dc.date.available | 2024-10-30T16:23:58Z | - |
| dc.date.issued | 2015-08-21 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/51186 | - |
| dc.title | Rapid solution process for high performance and stable Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing | - |
| dc.type | Conference | - |
| dc.citation.startPage | 247 | - |
| dc.citation.endPage | 247 | - |
| dc.citation.conferenceName | IMID 2015 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | EXCO | - |
| dc.citation.conferenceDate | 2015-08-18 ~ 2015-08-21 | - |
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