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effect of hydrogen plasma treatment on electrical properties and stability of amorphous GaInZnO thin film transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 양우철 | - |
| dc.date.accessioned | 2024-10-30T13:43:39Z | - |
| dc.date.available | 2024-10-30T13:43:39Z | - |
| dc.date.issued | 2013-07-05 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/48853 | - |
| dc.title | effect of hydrogen plasma treatment on electrical properties and stability of amorphous GaInZnO thin film transistors | - |
| dc.type | Conference | - |
| dc.citation.startPage | 58 | - |
| dc.citation.endPage | 58 | - |
| dc.citation.conferenceName | ISPSA 2013 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 라마다 호텔 | - |
| dc.citation.conferenceDate | 2013-07-02 ~ 2013-07-05 | - |
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