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Resistance Switching Characteristic in WOx based ReRAM having grapheme of h-BN single sheet interfacial layer
- Authors
- 김형상
- Issue Date
- 13-Dec-2013
- Place
- 대한민국
- Conference Name
- The 8th International Conference on Advanced Materials and Devices
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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