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Effect of hydrogen plasma treatment on electrical properties and stability of amorphous Ga-In-Zn-O thin film transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 양우철 | - |
| dc.date.accessioned | 2024-10-30T11:43:01Z | - |
| dc.date.available | 2024-10-30T11:43:01Z | - |
| dc.date.issued | 2012-07-05 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/46959 | - |
| dc.title | Effect of hydrogen plasma treatment on electrical properties and stability of amorphous Ga-In-Zn-O thin film transistor | - |
| dc.type | Conference | - |
| dc.citation.startPage | 91 | - |
| dc.citation.endPage | 91 | - |
| dc.citation.conferenceName | ICMAP 2012 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 라마다 플라자 | - |
| dc.citation.conferenceDate | 2012-07-04 ~ 2012-07-06 | - |
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)