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Modulation effects of AIN buffer layers on the structural and optical properties of GaN epilayers grown on Al2O3 substrates by plasma-assisted molecular-beam epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T10:02:39Z | - |
| dc.date.available | 2024-10-30T10:02:39Z | - |
| dc.date.issued | 2011-07-25 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/45322 | - |
| dc.title | Modulation effects of AIN buffer layers on the structural and optical properties of GaN epilayers grown on Al2O3 substrates by plasma-assisted molecular-beam epitaxy | - |
| dc.type | Conference | - |
| dc.citation.startPage | 0 | - |
| dc.citation.endPage | 0 | - |
| dc.citation.conferenceName | EP2DS19 | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferenceDate | 2011-07-25 ~ 2011-07-29 | - |
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