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0.2 um AlGaN/GaN high electron mobility transistor에서의 온도에 따른 수송 현상 연구
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 임현식 | - |
| dc.date.accessioned | 2024-10-30T07:42:04Z | - |
| dc.date.available | 2024-10-30T07:42:04Z | - |
| dc.date.issued | 2010-10-22 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/43213 | - |
| dc.title | 0.2 um AlGaN/GaN high electron mobility transistor에서의 온도에 따른 수송 현상 연구 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2010 물리학회 가을 학술 대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferenceDate | 2010-10-20 ~ 2010-10-22 | - |
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