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Quantum-mechanical narrow channel effects in Si nanowire-channel MOSFETs fabricated with patterned ultra-narrow [100] and [110] Si nanowires (Kp-II-009)
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2024-10-30T06:22:30Z | - |
| dc.date.available | 2024-10-30T06:22:30Z | - |
| dc.date.issued | 2009-04-24 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/42204 | - |
| dc.title | Quantum-mechanical narrow channel effects in Si nanowire-channel MOSFETs fabricated with patterned ultra-narrow [100] and [110] Si nanowires (Kp-II-009) | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 논문발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 대전 컨벤션 센터 | - |
| dc.citation.conferenceDate | 2009-04-23 ~ 2009-04-24 | - |
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