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Role of Nitride Traps in NBTI of Charge Trap Flaash Memory with Oxide-Nitride-Al2O3(ONA) Structures

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dc.contributor.author조훈영-
dc.date.accessioned2024-10-30T06:22:26Z-
dc.date.available2024-10-30T06:22:26Z-
dc.date.issued2009-10-07-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/42181-
dc.titleRole of Nitride Traps in NBTI of Charge Trap Flaash Memory with Oxide-Nitride-Al2O3(ONA) Structures-
dc.typeConference-
dc.citation.conferenceName216th Electrochemical Society Meeting-
dc.citation.conferencePlace오스트리아-
dc.citation.conferencePlace비엔나-
dc.citation.conferenceDate2009-10-04 ~ 2009-10-09-
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College of Natural Science > Department of Physics > 2. Conference Papers

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