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Cited 10 time in webofscience Cited 11 time in scopus
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Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature

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dc.contributor.authorLee, Youngmin-
dc.contributor.authorLee, Jin Woo-
dc.contributor.authorLee, Sejoon-
dc.contributor.authorHiramoto, Toshiro-
dc.contributor.authorWang, Kang L.-
dc.date.accessioned2023-04-27T14:41:05Z-
dc.date.available2023-04-27T14:41:05Z-
dc.date.issued2021-11-23-
dc.identifier.issn1936-0851-
dc.identifier.issn1936-086X-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/4158-
dc.description.abstractReconfigurable multivalue logic functions, which can perform the versatile arithmetic computation of weighted electronic data information, are demonstrated at room temperature on an all-around-gate silicon ellipsoidal quantum-dot transistor. The large single-hole transport energy of the silicon quantum ellipsoid allows the stable M-shaped Coulomb blockade oscillation characteristics at room temperature, and the all-around-gate structure of the fabricated transistor enables us to perform the precise self-control of the energetic Coulomb blockade conditions by changing the applied bias voltage. Such a self-controllability of the M-shaped Coulomb blockade oscillation characteristics provides a great advantage to choose multiple operation points for the reconfigurable multivalue logic functions. Consequently, the weighted data states (e.g., tri-value and quattro-value) are effectively demonstrated by utilizing only the device physics in the all-around-gate silicon ellipsoidal quantum-dot transistor. These findings are of great benefit for the practical application of the silicon quantum device at an elevated temperature for future nanoelectronic information technology.-
dc.format.extent11-
dc.language영어-
dc.language.isoENG-
dc.publisherAMER CHEMICAL SOC-
dc.titleReconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1021/acsnano.1c08208-
dc.identifier.scopusid2-s2.0-85118770920-
dc.identifier.wosid000747115200123-
dc.identifier.bibliographicCitationACS NANO, v.15, no.11, pp 18483 - 18493-
dc.citation.titleACS NANO-
dc.citation.volume15-
dc.citation.number11-
dc.citation.startPage18483-
dc.citation.endPage18493-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.subject.keywordPlusTRANSPORT-PROPERTIES-
dc.subject.keywordPlusELECTRON-TRANSPORT-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusSTATES-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordAuthorquantum dot-
dc.subject.keywordAuthorsingle-electron tunneling-
dc.subject.keywordAuthormultivalue logic-
dc.subject.keywordAuthorroom-temperature operation-
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