Cited 11 time in
Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Youngmin | - |
| dc.contributor.author | Lee, Jin Woo | - |
| dc.contributor.author | Lee, Sejoon | - |
| dc.contributor.author | Hiramoto, Toshiro | - |
| dc.contributor.author | Wang, Kang L. | - |
| dc.date.accessioned | 2023-04-27T14:41:05Z | - |
| dc.date.available | 2023-04-27T14:41:05Z | - |
| dc.date.issued | 2021-11-23 | - |
| dc.identifier.issn | 1936-0851 | - |
| dc.identifier.issn | 1936-086X | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/4158 | - |
| dc.description.abstract | Reconfigurable multivalue logic functions, which can perform the versatile arithmetic computation of weighted electronic data information, are demonstrated at room temperature on an all-around-gate silicon ellipsoidal quantum-dot transistor. The large single-hole transport energy of the silicon quantum ellipsoid allows the stable M-shaped Coulomb blockade oscillation characteristics at room temperature, and the all-around-gate structure of the fabricated transistor enables us to perform the precise self-control of the energetic Coulomb blockade conditions by changing the applied bias voltage. Such a self-controllability of the M-shaped Coulomb blockade oscillation characteristics provides a great advantage to choose multiple operation points for the reconfigurable multivalue logic functions. Consequently, the weighted data states (e.g., tri-value and quattro-value) are effectively demonstrated by utilizing only the device physics in the all-around-gate silicon ellipsoidal quantum-dot transistor. These findings are of great benefit for the practical application of the silicon quantum device at an elevated temperature for future nanoelectronic information technology. | - |
| dc.format.extent | 11 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | AMER CHEMICAL SOC | - |
| dc.title | Reconfigurable Multivalue Logic Functions of a Silicon Ellipsoidal Quantum-Dot Transistor Operating at Room Temperature | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1021/acsnano.1c08208 | - |
| dc.identifier.scopusid | 2-s2.0-85118770920 | - |
| dc.identifier.wosid | 000747115200123 | - |
| dc.identifier.bibliographicCitation | ACS NANO, v.15, no.11, pp 18483 - 18493 | - |
| dc.citation.title | ACS NANO | - |
| dc.citation.volume | 15 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 18483 | - |
| dc.citation.endPage | 18493 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.subject.keywordPlus | TRANSPORT-PROPERTIES | - |
| dc.subject.keywordPlus | ELECTRON-TRANSPORT | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
| dc.subject.keywordPlus | DEVICE | - |
| dc.subject.keywordPlus | STATES | - |
| dc.subject.keywordAuthor | silicon | - |
| dc.subject.keywordAuthor | quantum dot | - |
| dc.subject.keywordAuthor | single-electron tunneling | - |
| dc.subject.keywordAuthor | multivalue logic | - |
| dc.subject.keywordAuthor | room-temperature operation | - |
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