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electrical properties and controlled growth of Ge-nanocrystals embbedd in a SiO2 matrix using electron beam irraidation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 양우철 | - |
| dc.date.accessioned | 2024-10-30T05:21:57Z | - |
| dc.date.available | 2024-10-30T05:21:57Z | - |
| dc.date.issued | 2008-03-14 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/41168 | - |
| dc.title | electrical properties and controlled growth of Ge-nanocrystals embbedd in a SiO2 matrix using electron beam irraidation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 제 3회 전자빔 이용기술 워크샵 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 대전 | - |
| dc.citation.conferenceDate | 2008-03-14 | - |
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)