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3C-Sic 기판위에 MBE법에 의해 성장된 β-GaN의 성장 및 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강태원 | - |
| dc.date.accessioned | 2024-10-30T04:42:13Z | - |
| dc.date.available | 2024-10-30T04:42:13Z | - |
| dc.date.issued | 1996-04-26 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/40749 | - |
| dc.title | 3C-Sic 기판위에 MBE법에 의해 성장된 β-GaN의 성장 및 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 제72회 논문발표회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 수원 | - |
| dc.citation.conferenceDate | 1996-04-26 ~ 1996-04-27 | - |
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