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Obtaining high purity 6H-SiC single crystals by annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신동혁 | - |
| dc.date.accessioned | 2024-10-30T02:51:20Z | - |
| dc.date.available | 2024-10-30T02:51:20Z | - |
| dc.date.issued | 1999-05-31 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/37590 | - |
| dc.title | Obtaining high purity 6H-SiC single crystals by annealing | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Workshop on the Frontiers of Electronics | - |
| dc.citation.conferencePlace | 프랑스 | - |
| dc.citation.conferencePlace | Grenoble | - |
| dc.citation.conferenceDate | 1999-05-31 ~ 1999-06-04 | - |
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