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Comparison of characterization on the InN/GaN and GaN/InN Grown by MBE
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 김득영 | - |
| dc.date.accessioned | 2024-10-30T02:41:37Z | - |
| dc.date.available | 2024-10-30T02:41:37Z | - |
| dc.date.issued | 1999-04-23 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/37407 | - |
| dc.title | Comparison of characterization on the InN/GaN and GaN/InN Grown by MBE | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 봄 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 건국대 | - |
| dc.citation.conferenceDate | 1999-04-23 ~ 1999-04-24 | - |
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