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A Study on Characteristics of p-GaN Ohmic Contacts with Surface Treatments

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dc.contributor.author김득영-
dc.date.accessioned2024-10-30T02:31:30Z-
dc.date.available2024-10-30T02:31:30Z-
dc.date.issued2000-11-01-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/37018-
dc.titleA Study on Characteristics of p-GaN Ohmic Contacts with Surface Treatments-
dc.typeConference-
dc.citation.conferenceNameThe 10th Seoul International Symposium on the Physics of Semiconductors and Appl-
dc.citation.conferencePlace대한민국-
dc.citation.conferencePlace제주그랜드호텔,제주-
dc.citation.conferenceDate2000-11-01 ~ 2000-11-03-
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College of Natural Science > Division of Physics & Semiconductor Science > 2. Conference Papers

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