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Deep level defects of InAs quantum dots grown on GaAs by Molecular Beam Epitaxy
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T02:31:20Z | - |
| dc.date.available | 2024-10-30T02:31:20Z | - |
| dc.date.issued | 2000-09-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/36970 | - |
| dc.title | Deep level defects of InAs quantum dots grown on GaAs by Molecular Beam Epitaxy | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | Eleventh International Conference on Molecular Beam Epitaxy | - |
| dc.citation.conferencePlace | 중국 | - |
| dc.citation.conferencePlace | 베이징 | - |
| dc.citation.conferenceDate | 2000-09-10 ~ 2000-09-15 | - |
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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