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4H-SiC를 이용한 RF용 고출력 SiC MESFET의 제작 및 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신동혁 | - |
| dc.date.accessioned | 2024-10-30T02:21:26Z | - |
| dc.date.available | 2024-10-30T02:21:26Z | - |
| dc.date.issued | 2000-10-27 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/36771 | - |
| dc.title | 4H-SiC를 이용한 RF용 고출력 SiC MESFET의 제작 및 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국물리학회 2000년도 가을 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 포항 | - |
| dc.citation.conferenceDate | 2000-10-27 ~ 2000-10-28 | - |
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