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Annealing Behaviors of Titanium Silicides by High Temperature Sputtering Method
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정웅 | - |
| dc.date.accessioned | 2024-10-30T02:11:54Z | - |
| dc.date.available | 2024-10-30T02:11:54Z | - |
| dc.date.issued | 2000-11-01 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/36532 | - |
| dc.title | Annealing Behaviors of Titanium Silicides by High Temperature Sputtering Method | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 10th Seoul International Symposium on the Physics of Semiconductors and Appl | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 제주그랜드호텔,제주 | - |
| dc.citation.conferenceDate | 2000-11-01 ~ 2000-11-03 | - |
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