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RTLPCVD법에 의해 sapphire(1102)위에 제작된 Si 박막의 특성
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조훈영 | - |
| dc.date.accessioned | 2024-10-30T02:01:28Z | - |
| dc.date.available | 2024-10-30T02:01:28Z | - |
| dc.date.issued | 2001-07-05 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/36121 | - |
| dc.title | RTLPCVD법에 의해 sapphire(1102)위에 제작된 Si 박막의 특성 | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 진공학회 학술대회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | 한국과학기술원 | - |
| dc.citation.conferenceDate | 2001-07-05 ~ 2001-07-06 | - |
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